TN5325N3-G vs TN5325N8-G

Product Attributes

Part Number TN5325N3-G TN5325N8-G
Manufacturer Microchip Technology Microchip Technology
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
TN5325N3-G TN5325N8-G
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 215mA (Ta) 316mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7Ohm @ 1A, 10V 7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 25 V 110 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 740mW (Ta) 1.6W (Ta)
Operating Temperature - -
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-92-3 TO-243AA (SOT-89)
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-243AA