TN0106N3-G-P003 vs TN0104N3-G-P003

Product Attributes

Part Number TN0106N3-G-P003 TN0104N3-G-P003
Manufacturer Microchip Technology Microchip Technology
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
TN0106N3-G-P003 TN0104N3-G-P003
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 40 V
Current - Continuous Drain (Id) @ 25°C 350mA (Tj) 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 3V, 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 500mA, 10V 1.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 500µA 1.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 70 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 1W (Tc) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-92-3 TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA)