| Part Number | TK31J60W,S1VQ | TK31J60W5,S1VQ |
|---|---|---|
| Manufacturer | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
|
|
|
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) | 30.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 88mOhm @ 15.4A, 10V | 88mOhm @ 15.4A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 1.5mA | 3.7V @ 1.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V | 105 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 300 V | 3000 pF @ 300 V |
| FET Feature | Super Junction | Super Junction |
| Power Dissipation (Max) | 230W (Tc) | 230W (Tc) |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-3P(N) | TO-3P(N) |
| Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 |