TIS93_J35Z vs TIS97_J35Z

Product Attributes

Part Number TIS93_J35Z TIS97_J35Z
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
TIS93_J35Z TIS97_J35Z
Product Status Obsolete Obsolete
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 800 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA -
Current - Collector Cutoff (Max) 100nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 2V 250 @ 100µA, 5V
Power - Max 625 mW 625 mW
Frequency - Transition - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3