TIP110 vs TIP110G

Product Attributes

Part Number TIP110 TIP110G
Manufacturer NTE Electronics, Inc onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
TIP110 TIP110G
Product Status Active Active
Transistor Type NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) - 2 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max) 2mA 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V 1000 @ 1A, 4V
Power - Max - 2 W
Frequency - Transition 25MHz -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220