STW70N60DM2 vs STW70N60DM6

Product Attributes

Part Number STW70N60DM2 STW70N60DM6
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
STW70N60DM2 STW70N60DM6
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 66A (Tc) 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 42mOhm @ 33A, 10V -
Vgs(th) (Max) @ Id 5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 121 nC @ 10 V -
Vgs (Max) ±25V -
Input Capacitance (Ciss) (Max) @ Vds 5508 pF @ 100 V -
FET Feature - -
Power Dissipation (Max) 446W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3