STW70N60DM6-4 vs STW70N65DM6-4

Product Attributes

Part Number STW70N60DM6-4 STW70N65DM6-4
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
STW70N60DM6-4 STW70N65DM6-4
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc) 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 42mOhm @ 31A, 10V 40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 99 nC @ 10 V 125 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 4360 pF @ 100 V 4900 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 390W (Tc) 450W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-4 TO-247-4
Package / Case TO-247-4 TO-247-4