STW30NM60N vs STW30NM60D

Product Attributes

Part Number STW30NM60N STW30NM60D
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
STW30NM60N STW30NM60D
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 12.5A, 10V 145mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V 115 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 50 V 2520 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 190W (Tc) 312W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3