STQ2NK60ZR-AP vs STQ2HNK60ZR-AP

Product Attributes

Part Number STQ2NK60ZR-AP STQ2HNK60ZR-AP
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
STQ2NK60ZR-AP STQ2HNK60ZR-AP
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 400mA (Tc) 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 700mA, 10V 4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 25 V 280 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3W (Tc) 3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-92-3 TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads