STP50N60DM6 vs STP50N65DM6

Product Attributes

Part Number STP50N60DM6 STP50N65DM6
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
STP50N60DM6 STP50N65DM6
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 18A, 10V 91mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V 52.5 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 100 V 2300 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 250W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3