STP16N60M2 vs STP26N60M2

Product Attributes

Part Number STP16N60M2 STP26N60M2
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
STP16N60M2 STP26N60M2
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 6A, 10V -
Vgs(th) (Max) @ Id 4V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V -
Vgs (Max) ±25V -
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 100 V -
FET Feature - -
Power Dissipation (Max) 110W (Tc) 169W (Tc)
Operating Temperature 150°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3