STP11NM60 vs STP11NM80

Product Attributes

Part Number STP11NM60 STP11NM80
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
STP11NM60 STP11NM80
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 800 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V 400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 43.6 nC @ 10 V
Vgs (Max) ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 25 V 1630 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 160W (Tc) 150W (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3