STP110N8F6 vs STP100N8F6

Product Attributes

Part Number STP110N8F6 STP100N8F6
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
STP110N8F6 STP100N8F6
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 55A, 10V 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9130 pF @ 40 V 5955 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 200W (Tc) 176W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3