STP110N10F7 vs STP100N10F7

Product Attributes

Part Number STP110N10F7 STP100N10F7
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
STP110N10F7 STP100N10F7
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 55A, 10V 8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 61 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 50 V 4369 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3