STH320N4F6-2 vs STH360N4F6-2

Product Attributes

Part Number STH320N4F6-2 STH360N4F6-2
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
STH320N4F6-2 STH360N4F6-2
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 80A, 10V 1.25mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V 340 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13800 pF @ 15 V 17930 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package H²PAK H2Pak-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab) Variant TO-263-3, D²Pak (2 Leads + Tab), TO-263AB