STGW35NB60SD vs STGW35NB60S

Product Attributes

Part Number STGW35NB60SD STGW35NB60S
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
STGW35NB60SD STGW35NB60S
Product Status Obsolete Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 70 A 70 A
Current - Collector Pulsed (Icm) 250 A 250 A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A 1.7V @ 15V, 20A
Power - Max 200 W 200 W
Switching Energy 840µJ (on), 7.4mJ (off) 840µJ (on), 7.4mJ (off)
Input Type Standard Standard
Gate Charge 83 nC 83 nC
Td (on/off) @ 25°C 92ns/1.1µs 92ns/1.1µs
Test Condition 480V, 20A, 100Ohm, 15V 480V, 20A, 100Ohm, 15V
Reverse Recovery Time (trr) 44 ns -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3