STGD6M65DF2 vs STGB6M65DF2

Product Attributes

Part Number STGD6M65DF2 STGB6M65DF2
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
STGD6M65DF2 STGB6M65DF2
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 12 A 12 A
Current - Collector Pulsed (Icm) 24 A 24 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A 2V @ 15V, 6A
Power - Max 88 W 88 W
Switching Energy 36µJ (on), 200µJ (off) 36µJ (on), 200µJ (off)
Input Type Standard Standard
Gate Charge 21.2 nC 21.2 nC
Td (on/off) @ 25°C 15ns/90ns 15ns/90ns
Test Condition 400V, 6A, 22Ohm, 15V 400V, 6A, 22Ohm, 15V
Reverse Recovery Time (trr) 140 ns 140 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package DPAK D2PAK