STGD4M65DF2 vs STGB4M65DF2

Product Attributes

Part Number STGD4M65DF2 STGB4M65DF2
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
STGD4M65DF2 STGB4M65DF2
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 8 A 8 A
Current - Collector Pulsed (Icm) 16 A 16 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A 2.1V @ 15V, 4A
Power - Max 68 W 68 W
Switching Energy 40µJ (on), 136µJ (off) 40µJ (on), 136µJ (off)
Input Type Standard Standard
Gate Charge 15.2 nC 15.2 nC
Td (on/off) @ 25°C 12ns/86ns 12ns/86ns
Test Condition 400V, 4A, 47Ohm, 15V 400V, 4A, 47Ohm, 15V
Reverse Recovery Time (trr) 133 ns 133 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package DPAK D²PAK