STGB20H65DFB2 vs STGB30H65DFB2

Product Attributes

Part Number STGB20H65DFB2 STGB30H65DFB2
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
STGB20H65DFB2 STGB30H65DFB2
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 40 A 50 A
Current - Collector Pulsed (Icm) 60 A 90 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A 2.1V @ 15V, 30A
Power - Max 147 W 167 W
Switching Energy 265µJ (on), 214µJ (off) 270µJ (on), 310µJ (off)
Input Type Standard Standard
Gate Charge 56 nC 90 nC
Td (on/off) @ 25°C 16ns/78.8ns 18.4ns/71ns
Test Condition 400V, 20A, 10Ohm, 15V 400V, 30A, 6.8Ohm, 15V
Reverse Recovery Time (trr) 215 ns 115 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Supplier Device Package D2PAK-3 D2PAK-3