STGB20H60DF vs STGB30H60DF

Product Attributes

Part Number STGB20H60DF STGB30H60DF
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
STGB20H60DF STGB30H60DF
Product Status Active Obsolete
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 40 A 60 A
Current - Collector Pulsed (Icm) 80 A 120 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A 2.4V @ 15V, 30A
Power - Max 167 W 260 W
Switching Energy 209µJ (on), 261µJ (off) 350µJ (on), 400µJ (off)
Input Type Standard Standard
Gate Charge 115 nC 105 nC
Td (on/off) @ 25°C 42.5ns/177ns 50ns/160ns
Test Condition 400V, 20A, 10Ohm, 15V 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 90 ns 110 ns
Operating Temperature -55°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK D2PAK