STGB10H60DF vs STGB20H60DF

Product Attributes

Part Number STGB10H60DF STGB20H60DF
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
STGB10H60DF STGB20H60DF
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 20 A 40 A
Current - Collector Pulsed (Icm) 40 A 80 A
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 10A 2V @ 15V, 20A
Power - Max 115 W 167 W
Switching Energy 83µJ (on), 140µJ (off) 209µJ (on), 261µJ (off)
Input Type Standard Standard
Gate Charge 57 nC 115 nC
Td (on/off) @ 25°C 19.5ns/103ns 42.5ns/177ns
Test Condition 400V, 10A, 10Ohm, 15V 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 107 ns 90 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK (TO-263) D2PAK