STGB20M65DF2 vs STGB10M65DF2

Product Attributes

Part Number STGB20M65DF2 STGB10M65DF2
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
STGB20M65DF2 STGB10M65DF2
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 40 A 20 A
Current - Collector Pulsed (Icm) 80 A 40 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A 2V @ 15V, 10A
Power - Max 166 W 115 W
Switching Energy 140µJ (on), 560µJ (off) 120µJ (on), 270µJ (off)
Input Type Standard Standard
Gate Charge 63 nC 28 nC
Td (on/off) @ 25°C 26ns/108ns 19ns/91ns
Test Condition 400V, 20A, 12Ohm, 15V 400V, 10A, 22Ohm, 15V
Reverse Recovery Time (trr) 166 ns 96 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK D²PAK (TO-263)