STFI15NM65N vs STFI11NM65N

Product Attributes

Part Number STFI15NM65N STFI11NM65N
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
STFI15NM65N STFI11NM65N
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V 455mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.3 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 983 pF @ 50 V 800 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 30W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAKFP (TO-281) I2PAKFP (TO-281)
Package / Case TO-262-3 Full Pack, I²Pak TO-262-3 Full Pack, I²Pak