STBV45G-AP vs STBV42G-AP

Product Attributes

Part Number STBV45G-AP STBV42G-AP
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
STBV45G-AP STBV42G-AP
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 750 mA 1 A
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 135mA, 400mA 1.5V @ 250mA, 750mA
Current - Collector Cutoff (Max) 250µA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 400mA, 5V 10 @ 400mA, 5V
Power - Max 950 mW 1 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92AP TO-92AP