STBV32-AP vs STBV32G-AP

Product Attributes

Part Number STBV32-AP STBV32G-AP
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
STBV32-AP STBV32G-AP
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 1.5A 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max) 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 1A, 2V 5 @ 1A, 2V
Power - Max 1.5 W 1.5 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92AP TO-92AP