STB8NM60D vs STB8NM60N

Product Attributes

Part Number STB8NM60D STB8NM60N
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
STB8NM60D STB8NM60N
Product Status Not For New Designs Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 2.5A, 10V 650mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 25 V 560 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 100W (Tc) 70W (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB