STB33N60DM6 vs STB33N60DM2

Product Attributes

Part Number STB33N60DM6 STB33N60DM2
Manufacturer STMicroelectronics STMicroelectronics
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
STB33N60DM6 STB33N60DM2
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 128mOhm @ 12.5A, 10V 130mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V 1870 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 190W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB