SSP1N60B vs SSP1N50B

Product Attributes

Part Number SSP1N60B SSP1N50B
Manufacturer Fairchild Semiconductor Fairchild Semiconductor
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SSP1N60B SSP1N50B
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 520 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc) 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 12Ohm @ 500mA, 10V 5.3Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 10 V 11 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 215 pF @ 25 V 340 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 34W (Tc) 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3