SSI4N60BTU vs SSI7N60BTU

Product Attributes

Part Number SSI4N60BTU SSI7N60BTU
Manufacturer Fairchild Semiconductor Fairchild Semiconductor
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SSI4N60BTU SSI7N60BTU
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V 1.2Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 25 V 1800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.13W (Ta), 100W (Tc) 3.13W (Ta), 147W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK (TO-262) I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA