SQJ418EP-T1_GE3 vs SQJ488EP-T1_GE3

Product Attributes

Part Number SQJ418EP-T1_GE3 SQJ488EP-T1_GE3
Manufacturer Vishay Siliconix Vishay Siliconix
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SQJ418EP-T1_GE3 SQJ488EP-T1_GE3
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 10V 21mOhm @ 7.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 27 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V 979 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 68W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerPAK® SO-8 PowerPAK® SO-8
Package / Case PowerPAK® SO-8 PowerPAK® SO-8