SPW11N80C3FKSA1 vs SPW17N80C3FKSA1

Product Attributes

Part Number SPW11N80C3FKSA1 SPW17N80C3FKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SPW11N80C3FKSA1 SPW17N80C3FKSA1
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 7.1A, 10V 290mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 3.9V @ 680µA 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V 177 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 100 V 2320 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 156W (Tc) 227W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3