| Part Number | SPP02N60C3HKSA1 | SPP03N60C3HKSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) | 3.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V | 1.4Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 80µA | 3.9V @ 135µA |
| Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 10 V | 17 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V | 400 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 25W (Tc) | 38W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | PG-TO220-3-1 | PG-TO220-3-1 |
| Package / Case | TO-220-3 | TO-220-3 |