SPP02N60C3 vs SPP06N60C3

Product Attributes

Part Number SPP02N60C3 SPP06N60C3
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SPP02N60C3 SPP06N60C3
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1.1A, 10V 750mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 3.9V @ 80µA 3.9V @ 260µA
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V 620 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 25W (Tc) 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3