SPP02N60C3 vs SPP02N80C3

Product Attributes

Part Number SPP02N60C3 SPP02N80C3
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SPP02N60C3 SPP02N80C3
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 600 V -
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 3Ohm @ 1.1A, 10V -
Vgs(th) (Max) @ Id 3.9V @ 80µA -
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 25W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package PG-TO220-3-1 -
Package / Case TO-220-3 -