SPI70N10L vs SPI80N10L

Product Attributes

Part Number SPI70N10L SPI80N10L
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SPI70N10L SPI80N10L
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 50A, 10V 14mOhm @ 58A, 10V
Vgs(th) (Max) @ Id 2V @ 2mA 2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V 240 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4540 pF @ 25 V 4540 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 250W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3-1 PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA