SPI08N50C3 vs SPD08N50C3

Product Attributes

Part Number SPI08N50C3 SPD08N50C3
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SPI08N50C3 SPD08N50C3
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560 V 500 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 3.9V @ 350µA 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V 750 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 83W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package PG-TO262-3-1 PG-TO252-3-313
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-252-3, DPak (2 Leads + Tab), SC-63