SPD18P06PGBTMA1 vs SPD08P06PGBTMA1

Product Attributes

Part Number SPD18P06PGBTMA1 SPD08P06PGBTMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SPD18P06PGBTMA1 SPD08P06PGBTMA1
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18.6A (Tc) 8.83A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 6.2V
Rds On (Max) @ Id, Vgs 130mOhm @ 13.2A, 10V 300mOhm @ 10A, 6.2V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 25 V 420 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 80W (Tc) 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63