SPD08N50C3ATMA1 vs SPD03N50C3ATMA1

Product Attributes

Part Number SPD08N50C3ATMA1 SPD03N50C3ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SPD08N50C3ATMA1 SPD03N50C3ATMA1
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V 1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 3.9V @ 350µA 3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V 350 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 83W (Tc) 38W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63