SPD04P10PGBTMA1 vs SPD04P10PLGBTMA1

Product Attributes

Part Number SPD04P10PGBTMA1 SPD04P10PLGBTMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SPD04P10PGBTMA1 SPD04P10PLGBTMA1
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 2.8A, 10V 850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 380µA 2V @ 380µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 319 pF @ 25 V 372 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 38W (Tc) 38W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63