SPD02N60C3BTMA1 vs SPD02N80C3BTMA1

Product Attributes

Part Number SPD02N60C3BTMA1 SPD02N80C3BTMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SPD02N60C3BTMA1 SPD02N80C3BTMA1
Product Status Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 800 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1.1A, 10V 2.7Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 3.9V @ 80µA 3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V 290 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 25W (Tc) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO252-3-11 PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63