SPD02N60C3 vs SPD02N50C3

Product Attributes

Part Number SPD02N60C3 SPD02N50C3
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SPD02N60C3 SPD02N50C3
Product Status Active Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 560 V
Current - Continuous Drain (Id) @ 25°C - 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs - 3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id - 3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs - 9 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 190 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 25W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - PG-TO252-3-11
Package / Case - TO-252-3, DPak (2 Leads + Tab), SC-63