SPD08N50C3BTMA1 vs SPD02N50C3BTMA1

Product Attributes

Part Number SPD08N50C3BTMA1 SPD02N50C3BTMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SPD08N50C3BTMA1 SPD02N50C3BTMA1
Product Status Obsolete Obsolete
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 560 V -
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V -
Vgs(th) (Max) @ Id 3.9V @ 350µA -
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 83W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-TO252-3-11 -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 -