SPB80N06S2-08 vs SPB80N06S2-09

Product Attributes

Part Number SPB80N06S2-08 SPB80N06S2-09
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SPB80N06S2-08 SPB80N06S2-09
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 58A, 10V 9.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA 4V @ 125µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 25 V 3140 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 215W (Tc) 190W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB