SPB08P06P vs SPB18P06P

Product Attributes

Part Number SPB08P06P SPB18P06P
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SPB08P06P SPB18P06P
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta) 18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 6.2A, 10V 130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 28 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 25 V 860 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 42W (Tc) 81.1W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB