SMMBT5401LT1 vs SMMBT5401LT1G

Product Attributes

Part Number SMMBT5401LT1 SMMBT5401LT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
SMMBT5401LT1 SMMBT5401LT1G
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 150 V 150 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V 60 @ 10mA, 5V
Power - Max 300 mW 300 mW
Frequency - Transition 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)