SMBTA06E6327HTSA1 vs SMBTA56E6327HTSA1

Product Attributes

Part Number SMBTA06E6327HTSA1 SMBTA56E6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
SMBTA06E6327HTSA1 SMBTA56E6327HTSA1
Product Status Not For New Designs Not For New Designs
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 330 mW 330 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23