SI7613DN-T1-GE3 vs SI7611DN-T1-GE3

Product Attributes

Part Number SI7613DN-T1-GE3 SI7611DN-T1-GE3
Manufacturer Vishay Siliconix Vishay Siliconix
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SI7613DN-T1-GE3 SI7611DN-T1-GE3
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 40 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.7mOhm @ 17A, 10V 25mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V 62 nC @ 10 V
Vgs (Max) ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2620 pF @ 10 V 1980 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 52.1W (Tc) 3.7W (Ta), 39W (Tc)
Operating Temperature -50°C ~ 150°C (TJ) -50°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PowerPAK® 1212-8 PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8 PowerPAK® 1212-8