| Part Number | SI2308BDS-T1-GE3 | SI2307BDS-T1-GE3 |
|---|---|---|
| Manufacturer | Vishay Siliconix | Vishay Siliconix |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Active |
| FET Type | N-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) | 2.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 10V |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 1.9A, 10V | 78mOhm @ 3.2A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V | 15 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 30 V | 380 pF @ 15 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 1.09W (Ta), 1.66W (Tc) | 750mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |