SI2304DS,215 vs SI2302DS,215

Product Attributes

Part Number SI2304DS,215 SI2302DS,215
Manufacturer Nexperia USA Inc. NXP USA Inc.
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
SI2304DS,215 SI2302DS,215
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 117mOhm @ 500mA, 10V 85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 2V @ 1mA 650mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs 4.6 nC @ 10 V 10 nC @ 4.5 V
Vgs (Max) ±20V ±8V
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 10 V 230 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3