SGH20N60RUFDTU vs SGH30N60RUFDTU

Product Attributes

Part Number SGH20N60RUFDTU SGH30N60RUFDTU
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
SGH20N60RUFDTU SGH30N60RUFDTU
Product Status Obsolete Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 32 A 48 A
Current - Collector Pulsed (Icm) 60 A 90 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A 2.8V @ 15V, 30A
Power - Max 195 W 235 W
Switching Energy 524µJ (on), 473µJ (off) 919µJ (on), 814µJ (off)
Input Type Standard Standard
Gate Charge 55 nC 85 nC
Td (on/off) @ 25°C 30ns/48ns 30ns/54ns
Test Condition 300V, 20A, 10Ohm, 15V 300V, 30A, 7Ohm, 15V
Reverse Recovery Time (trr) 95 ns 95 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Supplier Device Package TO-3P TO-3P